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标签 > UnitedSiC
UnitedSiC便成为一家无晶圆厂公司，将资源集中在产品设计、研发和客户支持上，在行业发展趋势的带领下，公司快速、有效地稳步发展。
UnitedSiC SiC FET用户指南
UnitedSiC FET-Jet计算器成为更好的器件选择工具
UnitedSiC FET-Jet计算器让为功率设计选择SiC FET和SiC肖特基二极管变得轻而易举。设计工程师只需：
电动车是车轮上的数据中心，具有工业规模的电动机控制（图1），它的可行性取决于牵引逆变器和充电电路的效率。效率每提高一个百
通过收购 SiC 功率半导体公司 UnitedSiC，Qorvo 已将其影响力扩展到快速增长的电动汽车 (EV)、工业电
UnitedSiC提供七个采用七引脚设计的新750V SiC FET
许多人选择“七”这个数字是因为它的“幸运”属性，而UnitedSiC选择它则当然是因为七个引脚非常适合D2PAK半导体封
UnitedSiC（现为Qorvo）扩展了其突破性的第4代 SiC FET产品组合, 通过采用TO-247-4引脚封装的
UnitedSiC第四代威廉希尔官方网站 提供TO247-4L封装
UnitedSiC（现名Qorvo）扩充了其1200V产品系列，将其突破性的第四代SiC FET威廉希尔官方网站 推广到电压更高的应用
2020年 750V第四代SiC FET 诞生时，它与650V第三代器件的比较结果令人吃惊，以 6毫欧 器件为例，品质因
2022-05-23 标签： UnitedSiC 1212 0
UnitedSiC宣布推出行业先进的高性能 1200 V 第四代 SiC FET
中国北京 - 2022 年 5 月 17 日 – 移动应用、基础设施与航空航天、国防应用中 RF 解决方案的领先供应商
随着我们的产品接近边沿速率超快的理想半导体开关，电压过冲和振铃开始成为问题。适用于SiC FET的简单RC缓冲电路可以解
The promise of SiC
In 1999， a small team of researchers at Rutgers University founded UnitedSiC. This was in the days when Silicon Carbide （SiC） technology was still in its infancy， and devices were being manufactured in the research lab on thumbnail sized pieces of SiC. This team developed many of the basic SiC process techniques used with the
company‘s external foundry partners today.
In 2009， a group of successful entrepreneurs who believed in the promise of wide band-gap materials， and SiC in particular acquired the company. Even then， the overall sic market was relatively small， but it presented an excellent investment
opportunity based on the projected market for SiC-based devices. In addition，larger scale manufacturing techniques gave the potential to drive down the higher costs associated with a SiC solution.
In 2010， UnitedSiC built a pilot production cleanroom near Princeton NJ， to enhance the SiC processes to the stage where they could be directly installed in a
commercial foundry. At this point， UnitedSiC became a fabless company， focusing their resources on product design， R & D and customer support， employing an
already proven industry strategy that allowed for fast， efficient company growth. Growing SiC manufacturing capabilities In 2011， UnitedSiC processes were successully installed at a commercial foundry using the largest substrate （4 “） available at the time. The resulting products
delivered highly differentiated functionality， and improved power efficiency， based on a lower cost switch solution using the UnitedSiC core JFET technology. When coupled with an appropriately designed Si MOSFET， UnitedSiC was able to manufacture devices that were 1/2 the die size at 1200 V and less than 1/3 the die size at 650 V， compared to its nearest competitor. This not only delivered significantly improved device performance that helped customers achieve new levels of end system performance， but also helped drive company profitability. It is this technology that put UnitedSiC on the roadmap of the incumbent $1B Si Superjunction market.
The promise of SiC
In 1999， a small team of researchers at Rutgers University founded UnitedSiC. This was in the days when Silicon Carbide （SiC） technology was still in its infancy， and devices were being manufactured in the research lab on thumbnail sized pieces of SiC. This team developed many of the basic SiC process techniques used with the
company‘s external foundry partners today.
In 2009， a group of successful entrepreneurs who believed in the promise of wide band-gap materials， and SiC in particular acquired the company. Even then， the overall sic market was relatively small， but it presented an excellent investment
opportunity based on the projected market for SiC-based devices. In addition，larger scale manufacturing techniques gave the potential to drive down the higher costs associated with a SiC solution.
In 2010， UnitedSiC built a pilot production cleanroom near Princeton NJ， to enhance the SiC processes to the stage where they could be directly installed in a
commercial foundry. At this point， UnitedSiC became a fabless company， focusing their resources on product design， R & D and customer support， employing an
already proven industry strategy that allowed for fast， efficient company growth. Growing SiC manufacturing capabilities In 2011， UnitedSiC processes were successully installed at a commercial foundry using the largest substrate （4 “） available at the time. The resulting products
delivered highly differentiated functionality， and improved power efficiency， based on a lower cost switch solution using the UnitedSiC core JFET technology. When coupled with an appropriately designed Si MOSFET， UnitedSiC was able to manufacture devices that were 1/2 the die size at 1200 V and less than 1/3 the die size at 650 V， compared to its nearest competitor. This not only delivered significantly improved device performance that helped customers achieve new levels of end system performance， but also helped drive company profitability. It is this technology that put UnitedSiC on the roadmap of the incumbent $1B Si Superjunction market.
电动车是车轮上的数据中心，具有工业规模的电动机控制（图1），它的可行性取决于牵引逆变器和充电电路的效率。效率每提高一个百分点都能促进散热需求降低、重量减...
2020年 750V第四代SiC FET 诞生时，它与650V第三代器件的比较结果令人吃惊，以 6毫欧 器件为例，品质因数RDS•A降了近一半，由于体二...
2022-05-23 标签：UnitedSiC 1212 0
随着我们的产品接近边沿速率超快的理想半导体开关，电压过冲和振铃开始成为问题。适用于SiC FET的简单RC缓冲电路可以解决这些问题，并带来更高的效率增益。
UnitedSiC FET-Jet计算器成为更好的器件选择工具
UnitedSiC FET-Jet计算器让为功率设计选择SiC FET和SiC肖特基二极管变得轻而易举。设计工程师只需：
通过收购 SiC 功率半导体公司 UnitedSiC，Qorvo 已将其影响力扩展到快速增长的电动汽车 (EV)、工业电源控制、可再生能源和数据中心电源...
UnitedSiC提供七个采用七引脚设计的新750V SiC FET
许多人选择“七”这个数字是因为它的“幸运”属性，而UnitedSiC选择它则当然是因为七个引脚非常适合D2PAK半导体封装。
UnitedSiC（现为Qorvo）扩展了其突破性的第4代 SiC FET产品组合, 通过采用TO-247-4引脚封装的750V/6mOhm SiC F...
UnitedSiC第四代威廉希尔官方网站 提供TO247-4L封装
UnitedSiC（现名Qorvo）扩充了其1200V产品系列，将其突破性的第四代SiC FET威廉希尔官方网站 推广到电压更高的应用中。
UnitedSiC宣布推出行业先进的高性能 1200 V 第四代 SiC FET
中国北京 - 2022 年 5 月 17 日 – 移动应用、基础设施与航空航天、国防应用中 RF 解决方案的领先供应商 Qorvo®（纳斯达克代码：QR...
Qorvo®收购领先的碳化硅功率半导体供应商UnitedSiC公司
Qorvo今天宣布，已收购位于新泽西州普林斯顿领先碳化硅（SiC）功率半导体供应商UnitedSiC公司。
UnitedSiC的第4代SiC FET采用了“共源共栅”拓扑结构，其内部集成了一个SiC JFET并将之与一个硅MOSFET封装在一起。
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