热设计功率MOSFET同时运作（英）

ABSTRACT
 
The objective of this paper is the thermal design analysis of power MOSFETs  operating
in parallel and which uses phase change immersion cooling.  The heat generation (electrical
power dissipation) in such devices is a  function of the device resistance and  the current
through the device, both of which  are functions of junction temperature of the  device.
The junction temperature, in turn, depends on the thermal resistance between the junction
and  the  fluid which is a function of the boiling  heat transfer  coefficient, and  the  power
dissipated.  The analysis presented in this paper considers this  complex  interdependency
in the design of heat sinks such that the temperature is  below the  limit required by
reliability consideration.  Thermal coupling of  MOSFETs  minimizes  the junction
temperature.