IS61C25616AL,256K×16高速CMOS静态RAM

　　The ISSI IS61C25616AL/AS and IS64C25616AL/AS are high-speed， 4，194，304-bit static RAMs organized as 262，144 words by 16 bits. They are fabricated using ISSI‘s highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques， yields access times as fast as 12 ns with low power consumption. When CE is HIGH （deselected）， the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs， CE and OE. The active LOW Write Enable （WE） controls both writing and reading of the memory. A data byte allows Upper Byte （UB） and Lower Byte （LB） access. The IS61C25616AL/AS and IS64C25616AL/AS are packaged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin TSOP （Type II）.