3.3 V CMOS SRAM 64K×16,AS7C31026B数据手册

　　The AS7C31026B is a high-performance CMOS 1，048，576-bit Static Random Access Memory （SRAM） device organized as 65，536 words × 16 bits. It is designed for memory applications where fast data access， low power， and simple interfacing are desired. Equal address access and cycle times （tAA， tRC， tWC） of 10/12/15/20 ns with output enable access times （tOE） of 5， 6， 7， 8 ns are ideal for high-performance applications. When CE is high， the device enters standby mode. A write cycle is accomplished by asserting write enable （WE） and chip enable （CE）。 Data on the input pins I/O0 through I/O15 is written on the rising edge of WE （write cycle 1） or CE （write cycle 2）。 To avoid bus contention， external devices should drive I/O pins only after outputs have been disabled with output enable （OE） or write enable （WE）。 A read cycle is accomplished by asserting output enable （OE） and chip enable （CE） with write enable （WE） high. The chips drive I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive or write enable is active， output drivers stay in high-impedance mode. The device provides multiple center power and ground pins， and separate byte enable controls， allowing individual bytes to be written and read. LB controls the lower bits， I/O0 through I/O7， and UB controls the higher bits， I/O8 through I/O15. All chip inputs and outputs are TTL-compatible， and operation is from a single 3.3 V supply. The device is packaged in common industry standard packages.