TS5N214,pdf(2-BIT 1-OF-4 FET M

The TS5N214 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (r_on). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distorion on the data bus. Specifically designed to support high-bandwidth applications, the TS5N214 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The TS5N214 is a 2-bit 1-of-4 multiplexer/demultiplexer with separate output-enable (1OE, 2OE) inputs. The select (S0, S1) inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.