K9F1208U0M-YCB0, K9F1208U0M-YI

The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash
Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell
provides the most cost-effective solution for the solid state
mass storage market. A program operation programs the 528-
byte page in typical 200ms and an erase operation can be performed
in typical 2ms on a 16K-byte block. Data in the page
can be read out at 50ns cycle time per byte. The I/O pins serve
as the ports for address and data input/output as well as command
inputs. The on-chip write controller automates all program
and erase functions including pulse repetition, where
required, and internal verification and margining of data. Even
the write-intensive systems can take advantage of the
K9F1208U0M’s extended reliability of 100K program/erase
cycles by providing ECC(Error Correcting Code) with real time
mapping-out algorithm. The K9F1208U0M-YCB0/YIB0 is an
optimum solution for large nonvolatile storage applications such
as solid state file storage and other portable applications requiring
non-volatility.