650V N-Channel MOSFET

FEATURES ⚫ Fast switching ⚫ 100% avalanche tested ⚫ Improved dv/dt capability APPLICAtiONS ⚫ Switch Mode Power Supply (SMPS) ⚫ Uninterruptible Power Supply (UPS) ⚫ Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking NKF16N65F TO-220F NKF16N65F NKF16N65P TO-220 NKF16N65P NKF16N65W TO-247 NKF16N65W Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit TO-220F TO-220 TO-247 Drain-Source Voltage (VGS = 0V) VDSS 650 V Continuous Drain Current ID 16 A Pulsed Drain Current (note1) IDM 64 A Gate-Source Voltage VGSS ±30 V Single Pulse Avalanche Energy (note2) EAS 460 mJ Avalanche Current (note1) IAS 9.6 A Repetitive Avalanche Energy (note1) EAR 276 mJ Power Dissipation (TC = 25ºC) PD 98 196 W Operating Junction and Storage Temperature Range TJ, Tstg -55~+150 ºC Thermal Resistance Parameter Symbol Value Unit TO-220F TO-220 TO-247 Thermal Resistance, Junction-to-Case RthJC 1.27 0.635 ºC/W Thermal Resistance, Junction-to-Ambient RthJA