[问答]

SCT30N120内部体二极管能够像mosfet一样处理电流吗？

问答对人有帮助，内容完整，我也想知道答案 0 大家好，我打算在逆变器应用中使用sic mosfets（2级或3级），我搜索了一些制造商和价格，我看到sct30n120和ST说'非常快速和强大的内部体二极管（不需要外部续流二极管，因此，更紧凑的系统），内部体二极管能够像mosfet一样处理电流吗？可以说25A电流，还是应该使用外部体二极管？如果我使用外部体二极管;我可以使用快速恢复二极管吗？那将是什么缺点。外部SiC SBD是昂贵的＃sic-mosfet #*d＃sct30n120 以上来自于谷歌翻译以下为原文 Hi everyone, I am planning to use sic mosfets in inverter application(2 level or 3 level) and I searched some manufacturer and prices, I saw sct30n120 and ST says ' Very fast and robust intrinsic body diode (no need for external freewheeling diode, thus more compact systems)' , does intrinsic body diode can handle the current as much as the mosfet ? lets say 25A current , or should I use external body diode ? If I use external body diode; can I use fast recovery diode ? What will be the disadvantages of that. External SiC SBD's are expensive #sic-mosfet #*d #sct30n120 0
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答案对人有帮助，有参考价值 0 本征二极管可以处理与MOSFET相同的电流，但是与Rds（on）引起的压降相比，二极管具有非常高的压降，因此ST建议尽量减少使用本征二极管来减少损耗。关于逆变器，建议仅在死区时间内使用本征二极管，并在续流阶段利用第三象限运行（因此，当电流从源极流向漏极时，除了死区时间外，请用18V驱动MOSFET明显）。使用外部二极管是可能的，但需要使用SiC SBD，特别是在高频下，以便保持低开关损耗，增加SBD比在第三象限中使用SiC MOSFET更昂贵甚至更低效。以上来自于谷歌翻译以下为原文 The intrinsic diode can handle the same current as the MOSFET, nevertheless the diode has a very high voltage drop compared to the drop due to the Rds(on), hence ST recommends to minimize the use of the intrinsic diode to reduce the losses. With regard to inverters it is suggested to use the intrinsic diode only during the dead time and exploiting the 3rd quadrant operation during free-wheeling phase (so please drive the MOSFET with 18V also when the current flows from source to drain except for the dead time obviously). Using an external diode is possible but it is needed to use SiC SBDs especially at high frequency in order to maintain low switching losses, adding an SBD is more expensive and even less efficient than using the SiC MOSFET in the third quadrant.

2019-5-29 06:23:02 评论举报李旭彤

答案对人有帮助，有参考价值 0 谢谢你的回复，我知道内部体二极管由于电压下降而有更多的损失，但根据你的回复，我有点困惑，你说的是' ST建议尽可能减少使用本征二极管以减少损耗，并且“增加SBD比在第三象限中使用SiC MOSFET更昂贵，甚至更低效。”我们正计划制造一台30-50kW的statcom逆变器原型机。而且我没有得到你在这里说的话' 关于逆变器，建议仅在死区时间内使用本征二极管，并在续流阶段利用第三象限运行（因此，当电流从源极流向漏极时，除了死区时间外，请用18V驱动MOSFET明显）。 “ 18V操作是什么意思？我应该在续流阶段应用吗？你能清楚地解释一下吗？我真的需要正确的答案。谢谢。以上来自于谷歌翻译以下为原文 Thank you for your reply, I know intrinsic body diode has more losses due to the voltage drop but I am a little bit confused according to your reply, You're saying that ' ST recommends to minimize the use of the intrinsic diode to reduce the losses ' and also ' adding an SBD is more expensive and even LESS EFFICIENT than using the SiC MOSFET in the third quadrant.' we are planning to make a prototype of 30-50kW inverter of statcom. and Also I did not get what you were saying here ' With regard to inverters it is suggested to use the intrinsic diode only during the dead time and exploiting the 3rd quadrant operation during free-wheeling phase (so please drive the MOSFET with 18V also when the current flows from source to drain except for the dead time obviously). ' what do you mean with 18V operation ? should I apply it during the free wheeling phase ? Can you explain that clearly ? I really need the right answer. Thank you.

2019-5-29 06:33:00 评论举报张锐