[问答]

如何让Genesys接受英飞凌0级MOSFET模型

问答对人有帮助，内容完整，我也想知道答案 0 我正在尝试使用英飞凌IPW60R125CP设备的型号。英飞凌为这些设备发布0级，1级和3级模型。我意识到我不能使用除0级模型之外的任何东西，因为其他人使用的是一个涉及功能的酷炫模型，遗憾的是，这些功能在Genesys中不受支持。（希望它们很快就会得到支持!!）无论如何，当我尝试加载Level 0模型时，我会收到与Level相关的错误消息。我知道Genesys应该支持这个模型，因为它支持3级MOSFET，但我无法弄清楚如何修改已发布的0级Spice模型以使其正常工作。这是已发布的模型。为了让它与Genesys一起工作，我需要改变什么？（我知道我必须反转引脚1和2）。 **** .SUBCKT IPW60R125CP_L0漏极栅极源极Lg栅极g1 8n Ld漏极d1 3n Ls源极s1 8n Rs s1 s2 2m Rg g1 g2 2.1 M1 d2 g2 s2 s2 DMOS L = 1u W = 1u .MODEL DMOS MOS3_NMOS（KP = 40.755 VTO = 3.85 THETA = 0 VMAX = 1.5e5 ETA = 0 LEVEL = 3）Rd d2 d1a 0.093 TC = 13m。模具MVDR NMOS（KP = 98.67 VTO = -1 LAMBDA = 0.15）Mr d1 d2a d1a d1a MVDR W = 1u L = 1u Rx d2a d1a 1m Cds1 s2 d2 70.8p Dbd s2 d2 Dbt .MODEL Dbt D（BV = 600 M = 0.85 CJO = 32.18n VJ = 0.5V）Dbody s2 21 DBODY .MODEL DBODY D（IS = 15.2p N = 1.08 RS = 6u EG = 1.12 TT = 750n）Rdiode d1 21 4.66m TC = 6m .MODEL sw MOS1_NMOS（VTO = 0 KP = 10 LEVEL = 1）Maux g2 caa sw Maux2 bd g2 g2 sw Eaux ca d2 g2 1 Eaux2 d g2 d2 g2 -1 Cox b d2 1.99n .MODEL DGD D（M = 1 CJO = 1.99n VJ = 0.5）Rpar b d2 1Meg Dgd a d2 DGD Rpar2 d2 a 10Meg Cgs g2 s2 2.47n .ENDS IPW60R125CP_L0 **谢谢，艾德以上来自于谷歌翻译以下为原文 I am trying to use a model for an Infineon IPW60R125CP device. Infineon publishes Level 0, Level 1, and Level 3 models for these devices. I realize that I cannot use anything other than the level 0 model because others use a coolmos model which involves functions which, unfortunately, are not supported in Genesys. (Hopefully they will soon be supported!!) Anyway, when I try to load the Level 0 model, I get error messages related to Level. I know that Genesys should support this model, because it supports level 3 MOSFETs, but I can't figure out how to revise the published level 0 Spice model to get it to work properly. Here is the published model. What do I have to change to get it to work with Genesys? (I know I have to reverse pins 1 and 2). ** .SUBCKT IPW60R125CP_L0 drain gate source Lg gate g1 8n Ld drain d1 3n Ls source s1 8n Rs s1 s2 2m Rg g1 g2 2.1 M1 d2 g2 s2 s2 DMOS L=1u W=1u .MODEL DMOS MOS3_NMOS ( KP= 40.755 VTO=3.85 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3) Rd d2 d1a 0.093 TC=13m .MODEL MVDR NMOS (KP=98.67 VTO=-1 LAMBDA=0.15) Mr d1 d2a d1a d1a MVDR W=1u L=1u Rx d2a d1a 1m Cds1 s2 d2 70.8p Dbd s2 d2 Dbt .MODEL Dbt D(BV=600 M=0.85 CJO=32.18n VJ=0.5V) Dbody s2 21 DBODY .MODEL DBODY D(IS=15.2p N=1.08 RS=6u EG=1.12 TT=750n) Rdiode d1 21 4.66m TC=6m .MODEL sw MOS1_NMOS(VTO=0 KP=10 LEVEL=1) Maux g2 c a a sw Maux2 b d g2 g2 sw Eaux c a d2 g2 1 Eaux2 d g2 d2 g2 -1 Cox b d2 1.99n .MODEL DGD D(M=1 CJO=1.99n VJ=0.5) Rpar b d2 1Meg Dgd a d2 DGD Rpar2 d2 a 10Meg Cgs g2 s2 2.47n .ENDS IPW60R125CP_L0 **** Thanks, Ed 0
2018-12-12 16:21:55　　评论淘帖0 邀请回答您可以邀请以下用户，快速回答问题 × kingnet_52040 该类别下有 195 个回答。邀请回答 60user7 该类别下有 81 个回答。邀请回答蓝色冰汐该类别下有 45 个回答。邀请回答醉狼工作室该类别下有 41 个回答。邀请回答 ianwhoani 该类别下有 30 个回答。邀请回答 dkhwakd 该类别下有 25 个回答。邀请回答 aaabbb567 该类别下有 23 个回答。邀请回答 e08506806 该类别下有 20 个回答。邀请回答 szzjfyp 该类别下有 18 个回答。邀请回答 sonia87 该类别下有 16 个回答。邀请回答 ningee 该类别下有 16 个回答。邀请回答 zouqinxiang 该类别下有 15 个回答。邀请回答 xj5548 该类别下有 15 个回答。邀请回答 daichuangs 该类别下有 14 个回答。邀请回答 derek88 该类别下有 14 个回答。邀请回答 hzmbs2016 该类别下有 12 个回答。邀请回答 JST2006 该类别下有 12 个回答。邀请回答 juujwfdf 该类别下有 11 个回答。邀请回答 bisong13 该类别下有 11 个回答。邀请回答 hu_wflllllllg21 该类别下有 11 个回答。邀请回答举报张斌相关推荐 • 如何在最新版本的Genesys中使用ADS模型？ 4782 • 求分享MOSFET Spice模型资料 415 • 高压MOSFET与IGBT SPICE模型 2894 • 请问谁有包含非线性PIN二极管模型的好示例文件吗？ 636 • Genesys如何知道哪些端口是RF端口 1773 • 什么是计算Mosfet的Rg门驱动器的最佳方法 3656 • STD134NF7AG MOSFET的spice模型在哪 204 • multisim 中 MOSFET 如何修改器件参数模型，器件模型中的数据都是什么含义，是否有大神！！ 30407 • 当耗尽型MOSFET和JFET的栅源电压大于0时电流怎么变化 4311 • 遥控模型发送、接受装置原理 2292 1个回答

答案对人有帮助，有参考价值 0 我认为香料中没有一个等级= 0的MOS模型。然而，网表有一些与sw和MVDR模型相关的错误。一旦我纠正了这些创世记就能够在模型中读到没问题。这是修改后的网表。 .SUBCKT IPW60R125CP_L0漏极栅极源极Lg栅极g1 8n Ld漏极d1 3n Ls源极s1 8n Rs s1 s2 2m Rg g1 g2 2.1 M1 d2 g2 s2 s2 DMOS L = 1u W = 1u .MODEL DMOS NMOS（KP = 40.755 VTO = 3.85 THETA = 0 VMAX = 1.5e5 ETA = 0 LEVEL = 3）Rd d2 d1a 0.093 TC = 13m .MODEL MVDR NMOS（KP = 98.67 VTO = -1 LAMBDA = 0.15 LEVEL = 1）Mr d1 d2a d1a d1a MVDR W = 1u L = 1u Rx d2a d1a 1m Cds1 s2 d2 70.8p Dbd s2 d2 Dbt .MODEL Dbt D（BV = 600 M = 0.85 CJO = 32.18n VJ = 0.5V）Dbody s2 21 DBODY .MODEL DBODY D（IS = 15.2p N = 1.08） RS = 6u EG = 1.12 TT = 750n）Rdiode d1 21 4.66m TC = 6m .MODEL sw NMOS（VTO = 0 KP = 10 LEVEL = 1）Maux g2 caa sw Maux2 bd g2 g2 Eaux ca d2 g2 1 Eaux2 d g2 d2 g2 -1 Cox b d2 1.99n .MODEL DGD D（M = 1 CJO = 1.99n VJ = 0.5）Rpar b d2 1Meg Dgd a d2 DGD Rpar2 d2 a 10Meg Cgs g2 s2 2.47n .ENDS IPW60R125CP_L0 以上来自于谷歌翻译以下为原文 I do not think there ever was a level=0 MOS model in spice. However the netlist had a few errors related to the sw and MVDR model. Once I corrected those genesis was able to read in the model no problem. Here is the modified netlist. .SUBCKT IPW60R125CP_L0 drain gate source Lg gate g1 8n Ld drain d1 3n Ls source s1 8n Rs s1 s2 2m Rg g1 g2 2.1 M1 d2 g2 s2 s2 DMOS L=1u W=1u .MODEL DMOS NMOS ( KP= 40.755 VTO=3.85 THETA=0 VMAX=1.5e5 ETA=0 LEVEL=3) Rd d2 d1a 0.093 TC=13m .MODEL MVDR NMOS (KP=98.67 VTO=-1 LAMBDA=0.15 LEVEL=1) Mr d1 d2a d1a d1a MVDR W=1u L=1u Rx d2a d1a 1m Cds1 s2 d2 70.8p Dbd s2 d2 Dbt .MODEL Dbt D(BV=600 M=0.85 CJO=32.18n VJ=0.5V) Dbody s2 21 DBODY .MODEL DBODY D(IS=15.2p N=1.08 RS=6u EG=1.12 TT=750n) Rdiode d1 21 4.66m TC=6m .MODEL sw NMOS(VTO=0 KP=10 LEVEL=1) Maux g2 c a a sw Maux2 b d g2 g2 Eaux c a d2 g2 1 Eaux2 d g2 d2 g2 -1 Cox b d2 1.99n .MODEL DGD D(M=1 CJO=1.99n VJ=0.5) Rpar b d2 1Meg Dgd a d2 DGD Rpar2 d2 a 10Meg Cgs g2 s2 2.47n .ENDS IPW60R125CP_L0

2018-12-12 16:33:26 评论举报李晓婷