日复一日，收集设计电力电子设备的正确知识变得越来越具有挑战性，特别是在涉及高电流和高电压时。
太阳能逆变器，UPS，电机驱动，IH，焊接，汽车和牵引等应用中高性能电源转换系统的激增再次激发了人们对理解和优化IGBT特性以优化系统性能的兴趣。
效率和热性能是可靠性和坚固性的关键指标。
那么，接下来的挑战呢？
预测很安静，但APEC 2016（加利福尼亚州长滩 - 2016年3月20日至24日）绝对是一个了解更多信息的好机会。
事实上，在下一届APEC 2016大会（http://www.apec-conf.org）上，安森美半导体的一些人将参加职业教育研讨会：
“应对IGBT的高功率和高电压设计面临的挑战”
本次研讨会的重点是解决IGBT高功率和高压设计挑战所需的框架。
提供了功率硅威廉希尔官方网站
和通用拓扑/应用的上下文概述。
讨论了高功率应用的常见系统要求。
结果表明，每个终端应用在IGBT特性方面都有不同的要求。
此外，还详细讨论了许多常见的高功率应用，重点是拓扑，控制和常见问题。
还讨论了诸如多电平转换器的紧急拓扑。
总之，涉及IGBT设计的一些实际问题包括特别关注高功率系统的测量挑战和方法。
此外，探索了栅极驱动器威廉希尔官方网站
和冲击，续流二极管和模拟方法。
不要错过这个独特的机会，以了解有关Power Electronics可能面临的下一个挑战的更多信息！
安森美半导体的完整时间表如下：
专业教育研讨会：
3月20日星期日下午2:30
- 6月P.M.S12半导体和电子产品中的非线性热议题Roger P. Stout安森美半导体
3月21日星期一上午8点30分
- 12:00 P.MS15快速分析威廉希尔官方网站
简介：应用于小信号建模Christophe Basso安森美半导体，法国
S17解决IGBT高功率和高电压设计面临的挑战-Crisafulli Vittorio，Dhaval Dalal，Tomas Krecek，Dominic Li安森美半导体
参展商研讨会：
3月22日星期二，下午3：00-3：00 201AEnergy Efficient InnovationsDhaval Dalal
行业会议：
3月23日星期三，8：30-10：10，下一代锂离子电池管理解决方案，大大延长电池寿命，降低系统成本和复杂性Maatt Tyler
以上来自于谷歌翻译
以下为原文
Day after day it becomes more and more challenging to gather the right knowledge for designing Power Electronics equipment, especially when high currents and high voltages are involved.
The proliferation of high performance power conversion systems in applications such as solar inverters, UPS, motor drives, IH, welding, automotive and traction has rekindled the interest in understanding and optimizing IGBT characteristics in order to optimize the system performance. Efficiency and thermal performance are the key metrics along with reliability and ruggedness.
So, what about the next challenge?
Predictions are quiet difficult, but APEC 2016 (Long Beach, CA - March 20-24, 2016) is definitely a great occasion to learn more about this.
Indeed, at the next APEC 2016 conference (http://www.apec-conf.org ) couples of folks from ON Semiconductor will be presenting at the Professional Education Seminar:
‘Addressing Challenges in High Power and High Voltage Designs with IGBTs’
The emphasis of this seminar is on the framework needed to address challenges in high power and high voltage designs with IGBTs. A contextual overview of power silicon technologies and general topologies/applications is provided. Common system requirements for high power applications are discussed. It is shown that each end-application has a different set of requirements in terms of IGBT characteristics.
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In addition, many common high power applications are discussed in details with emphasis on topologies, control and common issues. Emergent topologies such as multilevel converters are also discussed.
To conclude, some practical issues related to IGBT Design are covered with special focus on measurements challenges and approaches for high power systems. Further, gate driver techniques and impact, freewheeling diode and simulations method are explored.
Don’t miss this unique opportunity to learn more about the possible next challenge in Power Electronics!
The full schedule of ON Semiconductor presentations is as follows:
Profession Education Seminars:
- Sunday, March 20th 2:30 P.M. – 6:00 P.M.
S12 Non-linear Thermal Topics in Semiconductors and Electronics
Roger P. Stout ON Semiconductor
- Monday, March 21st 8:30 A.M. – 12:00 P.M
S15 Introduction to Fast Analytical Techniques: Application to Small-Signal Modeling
Christophe Basso ON Semiconductor, France
- S17 Addressing Challenges in High Power and High Voltage Designs with IGBTs
Crisafulli Vittorio, Dhaval Dalal, Tomas Krecek, Dominic Li ON Semiconductor
Exhibitor Seminar:
- Tuesday, March 22nd, 3:00 – 3:30PM Room 201A
Energy Efficient Innovations
Dhaval Dalal
Industry Session:
- Wednesday, March 23rd, 8:30 – 10:10 AM
Next Generation Li-Ion Power Management Solutions That Dramatically Extend Battery Life and Reduce System Cost and Complexity
Matt Tyler
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