[资料]

东芝小型低导通电阻MOSFET的优点 SSM3J332R P-ch -30V/-6A RDS(ON) 0.042R

2018-5-15 22:37:38 2752

1.低导通电阻

卓越的沟槽工艺与封装威廉希尔官方网站相结合实现了低的导通电阻。这有助于提升您应用中的产品性能。

2.小型封装产品阵容

3.封装类型

Toshiba Package Name SOT-23F
Package Image
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm) 2.9×2.4×0.8
Package Dimensions

Land pattern dimensions

Please refer to the link destination to check the detailed size.

Absolute Maximum RatingsCharacteristics Symbol Rating Unit
Drain current ID -6 A
Power Dissipation PD 1 W
Drain-Source voltage VDSS -30 V
Gate-Source voltage VGSS +/-12 V

产品特性项目符号条件数值单位
Input capacitance (Typ.) Ciss - 560 pF
Total gate charge (Typ.) Qg - 8.2 nC
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 0.042 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 0.05 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 0.072 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.8V 0.144 Ω
Drain-Source on-resistance (Typ.) RDS(ON) |VGS|=10V 0.036 Ω
Drain-Source on-resistance (Typ.) RDS(ON) |VGS|=4.5V 0.0425 Ω
Drain-Source on-resistance (Typ.) RDS(ON) |VGS|=2.5V 0.0575 Ω
Drain-Source on-resistance (Typ.) RDS(ON) |VGS|=1.8V 0.0765 Ω
Gate threshold voltage (Max) Vth - -1.2 V
Gate threshold voltage (Min) Vth - -0.5 V